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During heat treatment of a cold worked metal, recrystallization is 20% complete after 100s. The transformation (in %) in 400s is _____(answer up to two decimal places) (Assume Avrami constant, n=2)

During heat treatment of a cold worked metal, recrystallization is 20% complete after 100s. The transformation (in %) in 400s is _____(answer up to two decimal places)

(Assume Avrami constant, n=2)

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For an intrinsic semiconductor, the room temperature electrical conductivity is 10-6 Ω-1m-1. If the electron and hole mobilities are 0.75 and 0.06 m2V-1s-1 respectively, the intrinsic carrier concentration (per m3) at room temperature is: (A) 1 × 1012 (B) 7 ×1012 ...Read more

For an intrinsic semiconductor, the room temperature electrical conductivity is 10^{-6} Ω^{-1}m^{-1}. If the electron and hole mobilities are 0.75 and 0.06 m^{2}V^{-1}s^{-1 }respectively, the intrinsic carrier concentration (per m^{3}) at room temperature is:

(A) 1 × 10^{12 }(B) 7 ×10^{12 }(C) 3 ×10^{12 } (D) 1.1 ×10^{14}

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For homogenous nucleation of solid in liquid of a pure metal, the critical edge length (in nm) of a cube shaped nucleus is ______. (answer up to two decimal places) Given surface energy γ=0.177 Jm-2 ; change in volume free energy ...Read more

For homogenous nucleation of solid in liquid of a pure metal, the critical edge length (in nm) of a cube shaped nucleus is ______. (answer up to two decimal places)

Given surface energy γ=0.177 Jm^{-2 }; change in volume free energy ΔG_{v} = -2.8 × 10^{8} Jm^{-3})